Azadeh Ansari received the B.S. degree in Electrical Engineering from Sharif University of Technology, Iran in 2010. She earned the M.S and Ph.D. degrees in Electrical Engineering from University of Michigan, Ann Arbor in 2013 and 2016 respectively, focusing upon III-V piezoelectric semiconductor materials and MEMS devices and microsystems for RF applications. Prior to joining the ECE faculty at Georgia Tech, she was a postdoctoral scholar in the Physics Department at Caltech from 2016 to 2017. Ansari is the recipient of a 2017 ProQuest Distinguished Dissertation Award from the University of Michigan for her research on "Gallium Nitride integrated microsystems for RF applications." She received the University of Michigan Richard and Eleanor Towner Prize for outstanding Ph.D. research in 2016. She is a member of IEEE, IEEE Sensor's young professional committee and serves as a technical program committee member of IEEE IFCS 2018.

Russell D. Dupuis earned all of his academic degrees from the University of Illinois at Urbana-Champaign. He received his bachelor's degree with "Highest Honors-Bronze Tablet" in 1970. He received his master's in electrical engineering in 1971, and his Ph.D. in 1973. His alma mater has honored him with the University of Illinois Alumni Loyalty Award, and the Distinguished Alumnus Award. Dupuis worked at Texas Instruments from 1973 to 1975. In 1975, he joined Rockwell International where he was the first to demonstrate that MOCVD could be used for the growth of high-quality semiconductor thin films and devices. He joined AT&T Bell Laboratories in 1979 where he extended his work to the growth of InP-InGaAsP by MOCVD. In 1989 he became a chaired professor at the University of Texas at Austin. In August 2003, he was appointed Steve W. Chaddick Chair in Electro-Optics at Georgia Tech in ECE. He is currently studying the growth of III-V compound semiconductor devices by MOCVD, including materials in the InAlGaN/GaN, InAlGaAsP/GaAs, InAlGaAsSb, and InAlGaAsP/InP systems.

Zhu's research focuses on the modeling and simulation of mechanical behavior of materials at the nano- to macroscale. Some of the scientific questions he is working to answer include understanding how materials fail due to the combined mechanical and chemical effects, what are the atomistic mechanisms governing the brittle to ductile transition in crystals, why the introduction of nano-sized twins can significantly increase the rate sensitivity of nano-crystals, and how domain structures affect the reliability of ferroelectric ceramics and thin films. To address these problems, which involve multiple length and time scales, he has used a variety of modeling techniques, such as molecular dynamics simulation, reaction pathway sampling, and the inter-atomic potential finite-element method. The goal of his research is to make materials modeling predictive enough to help design new materials with improved performance and reliability.

Professor Zangwill earned a B.S. in Physics at Carnegie-Mellon University in 1976. His 1981 Ph.D. in Physics at the University of Pennsylvania introduced the time-dependent density functional method. 

He worked at Brookhaven National Laboratory and the Polytechnic Institute of Brooklyn from 1981-1985 before taking up his present position at the Georgia Institute of Technology. 

He was named a Fellow of the American Physical Society in 1997 for theoretical studies of epitaxial crystal growth. 

He is the author of the monograph Physics at Surfaces (1988) and the graduate textbook Modern Electrodynamics (2013). In 2013, he began publishing scholarly work on the history of condensed matter physics.

Azad Naeemi received his B.S. degree in electrical engineering from Sharif University, Tehran, Iran in 1994, and his M.S. and Ph.D. degrees in electrical and computer engineering from the Georgia Institute of Technology, Atlanta, Ga. in 2001 and 2003, respectively.

Prior to his graduate studies (from 1994 to 1999), he was a design engineer with Partban and Afratab Companies, both located in Tehran, Iran. He worked as a research engineer in the Microelectronics Research Center at Georgia Tech from 2004 to 2008 and joined the ECE faculty at Georgia Tech in fall 2008.

His research crosses the boundaries of materials, devices, circuits, and systems investigating integrated circuits based on conventional and emerging nanoelectronic and spintronic devices and interconnects. He is the recipient of the IEEE Electron Devices Society (EDS) Paul Rappaport Award for the best paper that appeared in IEEE Transactions on Electron Devices during 2007. He is also the first recipient of the IEEE Solid-State Circuits Society James D. Meindl Innovators Award (2022). He has received an NSF CAREER Award, an SRC Inventor Recognition Award, and several best paper awards at international conferences.

Benjamin Klein received his B.S. and M.S. in Electrical Engineering from the University of Wisconsin-Madison in 1994 and 1995, respectively. He received his Ph.D. in Electrical Engineering from the University of Illinois – Urbana-Champaign in 2000. The subject of his doctoral dissertation was the theory and modeling of vertical-cavity surface-emitting lasers (VCSELs), which are a class of semiconductor laser used for telecommunications applications.

From 2000-2003, Klein worked as a postdoctoral researcher at the National Institute of Standards and Technology in Boulder, Colorado, working on the modeling and design of semiconductor quantum-dot based devices, including single photon emitters and single electron transistors. From 2003-2020 he was a faculty member at the Georgia Institute of Technology, first on the Savannah campus, and later in Atlanta. At the time of his departure from Georgia Tech, he was an Associate Professor and the Associate Chair for Graduate Affairs in the School of Electrical and Computer Engineering.