The Georgia Institute of Technology has an opening for a postdoctoral researcher to work with an interdisciplinary team to achieve fully bottom-up, high performance integrated circuits (ICs). The team’s approach combines state-of-the-art bottom-up semiconductor nanowire synthesis to create nanoelectronic devices (e.g., transistors) and ultrahigh-resolution 3-D printing to form electrical interconnects. If successful, a future IC printer promises to produce high-performance circuits (i.e., ~1 V, ~1 GHz) with a nearly limitless number of designs at low temperature in a space no larger than a desktop. The project is funded by the Defense Advanced Research Projects Agency (DARPA).
The ideal candidate will have:
- Experience in fabricating semiconductor devices in a university research cleanroom environment including materials synthesis and characterization, lithography, process integration, and device design.
- Experience in detailed electrical characterization and analysis of transistors including use of semiconductor probe stations and parameter analyzers, and extraction of transistor properties such as threshold voltage, effective mobility, and interface state density.
- Knowledge of semiconductor device physics and the relationship between transistor properties and materials synthesis/structure.
- Good oral and written communication skills as exemplified by high-quality publications and presentations in associated areas.
- A PhD in Electrical and Computer Engineering, Materials Science and Engineering or (solid-state) Physics.
The successful candidate will be integrated in a truly interdisciplinary group working on electronic materials synthesis, processing and devices. Female and under-represented minority candidates are strongly encouraged to apply. Applications should include a cover letter, a curriculum vitae including a complete list of publications and the contact details of at least three references.
External candidates may apply by visiting the USG Career Web Portal at: