John D. Cressler
![John Cressler](/sites/default/files/styles/people_page/public/photos/johncressler131023ar539_web.jpg?h=3f120b89&itok=rOgvSXPy)
Cressler grew up in Georgia, and received the B.S. degree in physics from Georgia Tech in 1984. From 1984 until 1992 he was on the research staff at the IBM Thomas J. Watson Research Center in Yorktown Heights, NY, working on high-speed Silicon and Silicon-Germanium (SiGe) microelectronic devices and technology.