The Georgia Tech AJA Nitride Multisource Sputtering System deposits thin metal and nitride films in argon and nitrogen-enriched low vacuum. The AJA Sputterer has 4 magnetron sputtering guns, 2 DC power sources, 3 RF power sources, and a heater that can reach up to 800°C. It also has the capability of pulse dc. RF Bias is also available up to 50W. It can process wafers up to 4" -Deposition Processes: Aluminum, Aluminum Nitride, Titanium, Titanium Nitride, W, Mo, Ta, and Tantalum Nitride.

Function

• Sputtering System for Metal and Dielectric materials.

Materials Deposited

• Al, Ti, AlN, TiN, Mo, W, Ta, TaN

Component Specifications

• Two DC Power Supplies, one pulse dc source
• Three RF Power Supplies, one RF Bias source
• Four Sputterering Guns
• IR Heater that goes up to 800°C

Gases

• Ar, N2

Substrate Size

• Up to 4” Wafer

Base Pressure

• 1x10-7Torr to 9x10-9Torr

Process Pressure

• 1mTorr -10mTorr

Temperature
•    25°C to 800°C

Vendor Specified Capabilities

• IR Heaters can reach 800°C
• Sample rotation
• DC Pulse Deposition
• RF Bias up to 50Watts
• Reactive Sputtering
• Co-deposition