The Georgia Tech AJA Nitride Multisource Sputtering System deposits thin metal and nitride films in argon and nitrogen-enriched low vacuum. The AJA Sputterer has 4 magnetron sputtering guns, 2 DC power sources, 3 RF power sources, and a heater that can reach up to 800°C. It also has the capability of pulse dc. RF Bias is also available up to 50W. It can process wafers up to 4" -Deposition Processes: Aluminum, Aluminum Nitride, Titanium, Titanium Nitride, W, Mo, Ta, and Tantalum Nitride.
Function
- Sputtering System for Metal and Dielectric materials.
Materials Deposited
- Al, Ti, AlN, TiN, Mo, W, Ta, TaN
Component Specifications
- Two DC Power Supplies, one pulse dc source
- Three RF Power Supplies, one RF Bias source
- Four Sputterering Guns
- IR Heater that goes up to 800°C
Gases
- Ar, N2
Substrate Size
- Up to 4” Wafer
Base Pressure
- 1x10-7Torr to 9x10-9Torr
Process Pressure
- 1mTorr -10mTorr
Temperature
• 25°C to 800°C
Vendor Specified Capabilities
- IR Heaters can reach 800°C
- Sample rotation
- DC Pulse Deposition
- RF Bias up to 50Watts
- Reactive Sputtering
- Co-deposition